<^>.ml-(-onauctoi ij-^ , o ne. 20 stern ave. springfield, new jersey 07081 u.s.a. telephone: (973) 376-2922 (212)227-6005 fax: (973) 376-8960 BLX97 u.h.f. linear power transistor n-p-n multi-emitter silicon planar epitaxial transistor primarily for use in linear u.n.f. amplifiers for television transposes and transmitters. features: ? guaranteed low intermodulation figures; * gold metallization ensures excellent reliability. the transistor has a !i" capstan envelope with a moulded cap. all leads are isolated from the stud. quick reference data r.f. performance in linear amplifier mode of operation tion ^vision mhz 860 860 vce v 25 25 'c ma 500 500 th c 25 25 dim* db -60 -60 p * "o sync w > 1.0 typ. 1.1 gp db > 5,5 typ. 6,5 class a class-a * three-tone test method (vision carrier ?8 db, sound carrier ?7 db, sideband signal ?16 db), zero db corresponds to peak sync level. mechanical data fig. 1 sot-48/3. dimensions in mm ? ? 0,14 torque on nut: min. 0,75 nm diameter of clearance hole in heatsink: max. 4,2 mm. (7,5 kg cm) mounting hole to have no burrs at either end. max. 0,85 nm de-burring must leave surface flat; do not chamfer or (8,5 kg cm) countersink either end of hole. when locking is required an adhesive is preferred instead of a lock washer. product safety this device incorporates beryllium oxide, the dust of which is toxic. the device is entirely safe provided that the bao disc is not damaged. nj semi-conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. information furnished by nj semi-conductors is believed to be both accurate and reliable at the time of going to press. however, nj semi-conductors assumes no responsibility for any errors or omissions discovered in its use. nj semi-conductors encourages customers to verify that datasheets are current before placing orders. quality semi-conductors
BLX97 ratings limiting values in accordance with the absolute maximum system (iec134) collector-base voltage (opea emitter; peak value) collector-emitter voltage (rgg = 10q;peak value) collector-emitter voltage (open base) emitter-base voltage (open collector) collector current (d.c.) collector current (peak value) f > 1 mhz total power dissipation up to tn = 100 c vcbom vcerm vceo vebo ic tcm p max. max. max. max. max. max. max. 40 40 27 3,5 0,8 2 12,5 v v v v a a w (ma) 103 102 10 d.c. soar 1 1 at t 1 p max , < 100 a luu ?h mb-h t<\ \ c ?^ " 0,6 k/w ? ^v 10 storage temperature junction temperature thermal resistance from junction to mounting base from mounting base to heats ink vce (v) io2 t stg tj rth j-mb ^h mb-h -65 to +200 max, 200 7,5 0,6 c c k/w . k/w
BLX97 characteristics tj = 25 c unless otherwise specified collector cut-off current ie = 0; vcb = 20 v breakdown voltages collector-base voltage open emitter; iq = 2 ma collector-emitter voltage rbe = 10 q; ic = 10 ma open base; i^. = 10 ma emitter-base voltage open collector; !e = 2 ma saturation voltage ic = 400 ma; iq = 40 ma d,c. current gain ic = 400 ma; vce = 20 v ic = 800 ma; vce = 20 v transition frequency ic = 400 ma; vce = 20 v ic = 700 ma; vce = 20 v collector capacitance at f = 1 mhz ie = le = 0; vcb = m v feedback capacitance at f = 1 mhz ic-20ma!vce = 20v;tmh = 25 collector-stud capacitance 'cbo v(br)cbo v(br)cer v(br)ceo v(br)ebo fe 200 pa 40 v 40 v 27 v 3,5 v vcesat * 0,75 v typ. typ. 30 20 1,2 ghz 1,0 ghz 20 pf 7 pf 2 pf
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